Associate Professor Yin-Yin Jennifer Wong Leung
1991 BSc Hons Physics (University of Bristol, UK), 1998 PhD Electronic Materials (ANU)
Senior Fellow
ANU College of Science
Areas of expertise
- Elemental Semiconductors 091204
- Surfaces And Structural Properties Of Condensed Matter 020406
- Compound Semiconductors 091203
- Soft Condensed Matter 020405
- Photonics, Optoelectronics And Optical Communications 020504
- Metals And Alloy Materials 091207
- Condensed Matter Physics 0204
- Electrical And Electronic Engineering 0906
- Materials Engineering 0912
- Nanotechnology 1007
Research interests
- TEM of solar cell device structures for enhanced photovoltaic performance
- control over crystal structure, composition and homogeneity of ternary III-V nanowires
- materials challenges in ZnO
- TEM of nanowires
- Light emission in ion implanted Silicon
- ion implantation in Silicon Carbide
Biography
Jenny Wong-Leung is a visiting associate professor at the ANU. She first obtained a bachelor of science in Physics with honours at the University of Bristol in UK in 1991. She then completed a PhD degree at the Australian National University in 1997 with her PhD thesis titled “The gettering of metals in silicon to defects induced by ion implantation’. During this period, she spent 3 months as a visiting student at A.T & T. Bell Laboratories in the US working on the effect of Fe contamination on gate oxide. She was the recipient of an ARC postdoctoral fellowship (1998-2001) which was focused on implantation induced defects in silicon and also an ARC QEII fellowship (2002-2007) based on “Ion implantation in Silicon Carbide for microelectronics applications”. Her main interests are in the structural and electrical characterisation of semiconductors. She has also been involved in defect characterisation in ion implanted semiconductors, as grown semiconductor heterostructures and nanostructures. She has worked with a range of semiconductors, Si, SiC, ZnO, III-V semiconductors such as GaAs, InAs, GaP, InP, InGaAs and AlGaAs. Her expertise in semiconductors are in ion implantation defects in semiconductors with prime techniques like transmission electron microscopy, deep level transient spectroscopy, Rutherford backscattering spectrometry. She has been involved in close collaborations with research groups in US, Sweden, Norway and the UK.
Publications
- Narangari, P, Karuturi, S, Wu, Y et al. 2019, 'Ultrathin Ta 2 O 5 electron-selective contacts for high efficiency InP solar cells', Nanoscale, vol. 11, no. 15, pp. 7497-7505.
- Butson, J, Narangari, P, Lysevych, M et al. 2019, 'InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting', ACS Applied Materials and Interfaces, vol. 11, no. 28, pp. 25236-25242.
- Yang, I, Li, Z, Wong Leung, Y et al. 2019, 'Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes', Nano Letters, vol. 19, no. 6, pp. 3821-3829.
- Wong Leung, Y, Yang, I, Li, Z et al. 2019, 'Engineering III-V Semiconductor Nanowires for Device Applications', Advanced Materials, vol. 32, no. 18, p. 1904359.
- Zhao, B, Lockrey, M, Caroff-Gaonac'h, P et al. 2018, 'The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods', Nanoscale, vol. 10, no. 23, pp. 11205-11210.
- Karuturi, S, Shen, H, Duong, T et al. 2018, 'Perovskite Photovoltaic Integrated CdS/TiO2 Photoanode for Unbiased Photoelectrochemical Hydrogen Generation', ACS Applied Materials and Interfaces, vol. 10, no. 28, pp. 23766-23773pp.
- Karuturi, S, Yew, R, Narangari, P et al. 2018, 'CdS/TiO2 photoanodes via solution ion transfer method for highly efficient solar hydrogen generation', Nano Futures, vol. 2, no. 1, pp. 8pp.
- Chugh, D, Wong Leung, Y, Li, L et al. 2018, 'Flow modulation epitaxy of hexagonal boron nitride', 2D Materials, vol. 5, no. 4, pp. 1-10pp.
- Yang, I, Zhang, X, Zheng, C et al. 2018, 'Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy', ACS Nano, vol. 12, no. 10, pp. 10374-10382pp.
- Liu, A, Yan, D, Wong Leung, Y et al. 2018, 'Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cells', 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, IEEE, United States, pp. 1667-1671pp.
- Liu, A, Yan, D, Wong Leung, Y et al. 2018, 'Direct observation of the impurity gettering layers in polysilicon-based passivating contacts for silicon solar cells', ACS Applied Energy Materials, vol. 1, pp. 2275-2282.
- Joyce, H, Uswachoke, C, Baig, S et al. 2018, 'Engineering III-V nanowires for optoelectronics: From epitaxy to terahertz photonics', Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV 2018, ed. D L Huffaker, H Eisele, SPIE, TBC, pp. -.
- Schifano, R, Riise, H, Domagała, J et al. 2017, 'Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering', Journal of Applied Physics, vol. 121, no. 1, pp. 8pp.
- Rota, M, Ameruddin, A, Wong Leung, Y et al. 2017, 'Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires', Journal of Physical Chemistry C, vol. 121, no. 30, pp. 16650-16656.
- Alexander-Webber, J, Groschner, C, Sagade, A et al. 2017, 'Engineering the Photoresponse of InAs Nanowires', ACS Applied Materials and Interfaces, vol. 9, no. 50, pp. 43993-44000pp.
- Joyce, H, Baig, S, Wong Leung, Y et al. 2017, 'Semiconductor nanowires in terahertz photonics: From spectroscopy to ultrafast nanowire-based devices', 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2017, IEEE, TBC, pp. 1-2.
- Patel, J, Wong Leung, Y, Reenen, S et al 2016, 'Influence of Interface Morphology on Hysteresis in Vapor-Deposited Perovskite Solar Cells', Advanced Electronic Materials, vol. 3, no. 2, pp. 1-6.
- Nguyen, H, Phang, S, Wong Leung, Y et al. 2016, 'Photoluminescence Excitation Spectroscopy of Diffused Layers on Crystalline Silicon Wafers', IEEE Journal of Photovoltaics, vol. 6, no. 3, pp. 746-753.
- Gao, Q, Dubrovskii, V, Caroff-Gaonac'h, P et al. 2016, 'Simultaneous Selective-Area and Vapor−Liquid−Solid Growth of InP Nanowire Arrays', Nano Letters, vol. 16, no. 7, pp. 4361-4367.
- Chan, K, Vines, L, Li, L et al. 2016, 'Zn precipitation and Li depletion in Zn implanted ZnO', Applied Physics Letters, vol. 109, no. 2, pp. 022102-1-4.
- Tran, P, Alkhaldi, H, Gandhi, H et al. 2016, 'Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer', Applied Physics Letters, vol. 109, no. 8, pp. -.
- Ameruddin, A, Fonseka, H, Caroff-Gaonac'h, P et al. 2015, 'InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology', Nanotechnology, vol. 26, no. 20, pp. 1-10.
- Chan, K, Vines, L, Li, L et al. 2015, 'Equilibrium shape of nano-cavities in H implanted ZnO', Applied Physics Letters, vol. 106, no. 21.
- Yuan, X, Caroff-Gaonac'h, P, Wong Leung, Y et al. 2015, 'Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering', Advanced Materials, vol. 27, no. 40, pp. 6096-6103.
- Yuan, X, Caroff-Gaonac'h, P, Wong Leung, Y et al. 2015, 'Controlling the morphology, composition and crystal structure in gold-seeded GaAs1-xSbx nanowires', Nanoscale, vol. 7, no. 11, pp. 4995-5003.
- Fonseka, H, Caroff-Gaonac'h, P, Wong Leung, Y et al. 2014, 'Nanowires grown on InP (100): Growth directions, facets, crystal structures, and relative yield control', ACS Nano, vol. 8, no. 7, pp. 6945-6954.
- Gao, Q, Saxena, D, Wang, F et al. 2014, 'Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing', Nano Letters, vol. 14, no. 9, pp. 5206-5211.
- Chan, K, Ton-That, C, Vines, L et al. 2014, 'Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO', Journal of Physics D: Applied Physics, vol. 47, no. 34, pp. 1-6.
- Jiang, N, Wong Leung, Y, Joyce, H et al. 2014, 'Understanding the true shape of Au-catalyzed GaAs nanowires', Nano Letters, vol. 14, no. 10, pp. 5865-5872.
- Ullah, A, Joyce, H, Burke, A et al. 2014, 'How InAs Crystal Phase affects the Electrical Performance of InAs Nanowire FETs', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014), ed. Martyniuk M.Faraone, IEEE, New York, pp. 283-285.
- Jiang, N, Wong Leung, Y, Gao, Q et al. 2014, 'Sidewall evolution in VLS grown GaAs Nanowires', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014), ed. Martyniuk M.Faraone, IEEE, New York, pp. 87-89.
- Fonseka, H, Caroff-Gaonac'h, P, Guo, Y et al. 2014, 'InP-Based Radial Heterostructures Grown on [100] Nanowires', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014), ed. Martyniuk M.Faraone, IEEE, New York, pp. 168-170.
- Fonseka, H, Tan, H, Wong Leung, Y et al. 2013, 'High vertical yield InP nanowire growth on Si(111) using a thin buffer layer', Nanotechnology, vol. 24, no. 46, p. 9.
- Burgess, T, Breuer, S, Caroff-Gaonac'h, P et al. 2013, 'Twinning superlattice formation in GaAs nanowires', ACS Nano, vol. 7, no. 9, pp. 8105-8114.
- Zheng, C, Wong Leung, Y, Gao, Q et al. 2013, 'Polarity-driven 3-fold symmetry of GaAs/AlGaAs core multishell nanowires', Nano Letters, vol. 13, no. 8, pp. 3742-3748.
- Chan, K, Vines, L, Johansen, K et al. 2013, 'Defect formation and thermal stability of H in high dose H implanted ZnO', Journal of Applied Physics, vol. 114, no. 8.
- Jiang, N, Gao, Q, Parkinson, P et al. 2013, 'Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization', Nano Letters, vol. 13, no. 11, pp. 5135-5140.
- Gao, Q, Jiang, N, Joyce, H et al. 2013, 'Compound semiconductor nanowires for optoelectronic devices', 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013, Institute of Electrical and Electronics Engineers (IEEE Inc), Online, pp. 1-2.
- Joyce, H, Docherty, C, Yong, C et al. 2013, 'Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy', SPIE Micro+Nano Materials, Devices, and Applications 2013 Conference, ed. James Friend & H.H Tan, SPIE, New York, pp. 1-6.
- Ullah, A, Joyce, H, Burke, A et al. 2013, 'Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors', Physica Status Solidi: Rapid Research Letters, vol. 7, no. 10, pp. 911-914.
- Jiang, N, Gao, Q, Parkinson, P et al. 2013, 'High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD', 2013 26th IEEE Photonics Conference, IPC 2013, IEEE, Bellevue, WA, pp. 476-477.
- Joyce, H, Docherty, C, Yong, C et al. 2013, 'Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy', 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013, IEEE, Mainz, pp. 1-2.
- Hu, W, Liu, Y, Withers, R et al. 2013, 'Electron-pinned defect-dipoles for high-performance colossal permittivity materials', Nature Materials, vol. 12, no. 9, pp. 821-826.
- Yong, C, Wong Leung, Y, Joyce, H et al 2013, 'Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions', Nano Letters, vol. 13, no. 9, pp. 4280-4287.
- Vines, L, Neuvonen, P, Kuznetsov, A et al. 2012, 'Anomalous diffusion of intrinsic defects in K+ implanted ZnO using Li as tracer', Materials Research Society Fall Meeting 2011, Materials Research Society, Boston USA, pp. 75-80.
- Vines, L, Wong Leung, Y, Jagadish, C et al. 2012, 'Ion implantation induced defects in ZnO', Physica B, vol. 407, no. 10, pp. 1481-1484.
- Johnson, B, Villis, B, Burgess, J et al. 2012, 'Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon', Journal of Applied Physics, vol. 111, no. 9, pp. 094910/1-8.
- Mokkapati, S, Saxena, D, Jiang, N et al. 2012, 'Polarization tunable, multicolor emission from core-shell photonic III-V semiconductor nanowires', Nano Letters, vol. 12, no. 12, pp. 6428-6431.
- Zuber, K, Merkens, K, Frölich, K et al. 2012, 'Anderson-like localization in ultrathin nanocomposite alloy films on polymeric substrates', Scripta Materialia, vol. 67, no. 10, pp. 866-869.
- Joyce, H, Wong Leung, Y, Yong, C et al. 2012, 'Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy', Nano Letters, vol. 12, no. 10, pp. 5325-5330.
- Charnvanichborikarn, S, Wong Leung, Y, Jagadish, C et al. 2012, 'Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon', MRS Communications, vol. 2, no. 3, pp. 101-105.
- Linnarsson, M, Wong Leung, Y, Hallen, A et al. 2012, 'Mn implantation for new applications of 4H-SiC', International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), Conference Organising Committee, Cleveland USA, pp. 221-224.
- Yuan, X, Tan, H, Parkinson, P et al. 2012, 'Growth and characterization of GaAx1-xSbx nanowires', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 141-142.
- Chan, K, Ye, J, Parkinson, P et al. 2012, 'Structural and Optical properties of H implanted ZnO', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 219-220.
- Jiang, N, Parkinson, P, Gao, Q et al. 2012, 'Improvement of Minority Carrier Lifetime in GaAs/AlxGal1-xAs Core-Shell Nanowires', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 33-34.
- Gao, Q, Tan, H, Fu, L et al. 2012, 'InP Nanowires Grown by SA-MOVPE', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 45-46.
- Ameruddin, A, Tan, H, Fonseka, H et al. 2012, 'Influence of growth temperature and V/III ratio on Au-assisted InxGa1-xAs nanowires', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 37-38.
- Vines, L, Wong Leung, Jagadish, CJ, Quemener, V, Monakhov, EV & Svensson, BG 2012, 'Acceptor-like deep level defects in ion-implanted ZnO', Applied Physics Letters, vol. 100, no. 21, pp. 212106.
- Jiang, N, Parkinson, P, Gao, Q et al 2012, 'Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowires', Applied Physics Letters, vol. 101, no. 2, pp. 02311-1 to 02311-4.
- McKerracher, I, Wong Leung, Y, Jolley, G et al. 2011, 'Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors', IEEE Journal of Quantum Electronics, vol. 47, no. 5, pp. 577-590.
- Joyce, H, Gao, Q, Wong Leung, Y et al. 2011, 'Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications', IEEE Journal on Selected Topics in Quantum Electronics, vol. 17, no. 4, pp. 766-778.
- Messing, M, Wong Leung, Y, Zanolli, Z et al. 2011, 'Growth of Straight InAs-on-GaAs Nanowire Heterostructures', Nano Letters, vol. 11, no. 9, pp. 3899-3905.
- McCallum, J, Villis, B, Johnson, B et al. 2011, 'Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon', Physica Status Solidi A, vol. 208, no. 3, pp. 620-623.
- Barik, S, Tan, H, Wong Leung, Y et al. 2010, 'Growth and characterization of self-assembled InAs/InP quantum dot structures', Journal of Nanoscience and Nanotechnology, vol. 10, no. 3, pp. 1525-1536.
- Burgess, J, Johnson, B, Villis, B et al. 2010, 'Comparison between implanted boron and phosphorus in silicon wafers', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), ed. H. Hoe Tan, Institute of Electrical and Electronics Engineers (IEEE Inc), Australia, pp. 225-226.
- Williams, J & Wong Leung, Y 2010, 'Voids and Nanocavities in Silicon', in Harry Bernas (ed.), Topics in Applied Physics 116: Materials Science with Ion Beams, Springer, Berlin, pp. 113-146.
- McKerracher, I, Wong Leung, Y, Jolley, G et al. 2010, 'Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), ed. H. Hoe Tan, Institute of Electrical and Electronics Engineers (IEEE Inc), Australia, p. 2.
- Charnvanichborikarn, S, Villis, B, Johnson, B et al. 2010, 'Effect of boron on interstitial-related luminescence centers in silicon', Applied Physics Letters, vol. 96, no. 5, p. 051906.
- Joyce, H, Wong Leung, Y, Gao, Q et al. 2010, 'Phase Perfection in Zinc Blende and Wurtzite III-V Nanowires Using Basic Growth Parameters', Nano Letters, vol. 10, no. 3, pp. 908-915.
- Charnvanichborikarn, S, Wong Leung, Y & Williams, J 2009, 'Self-assembled Au nanoparticles in SiO2 by ion implantation and wet oxidation', Journal of Applied Physics, vol. 106, no. 10, pp. 103526/1-8.
- Charnvanichborikarn, S, Conway, M, Wong Leung, Y et al. 2009, 'Achieving a narrow size distribution of Au particles at a precise depth in SiO2 by segregation of Au precipitates', Nanotechnology, vol. 20, no. 18, p. 6.
- Bao, J, Charnvanichborikarn, S, Yang, Y et al. 2008, 'Point Defect Engineered Si Sub-Bandgap Light-emitting Diodes', Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV 2007, ed. H H Tan, J-C Chiao, L Faraone, C Jagadish, J Williams, A R Wilson, SPIE - The International Society for Optical Engineering, USA, pp. 1-8.
- Mokkapati, S, Wong Leung, Y, Tan, H et al. 2008, 'Tuning the bandgap of InAs quantum dots by selective-area MOCVD', Journal of Physics D: Applied Physics, vol. 41, no. 085104, pp. 1-4.
- Wong Leung, Y, Janson, M, Kuznetsov, A et al. 2008, 'Ion implantation in 4H-SiC', Nuclear Instruments and Methods in Physics Research: Section B, vol. 266, pp. 1367-1372.
- Wong Leung, Y & Svensson, B 2008, 'Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC', Applied Physics Letters, vol. 92, no. 14, pp. 1-3.
- Coleman, P, Harding, R, Davies, G et al. 2007, 'The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si', Journal of Materials Science, vol. 18, pp. 695-700.
- Sears, K, Wong Leung, Y, Tan, H et al. 2006, 'A Transmission Electron Microscopy Study of Defects formed through the Capping Layer of Self-assembled InAs/GaAs Quantum Dot Samples', Journal of Applied Physics, vol. 99, no. 11, pp. 113503-1-8.
- Fu, L, Tan, H, McKerracher, I et al. 2006, 'Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors', Journal of Applied Physics, vol. 99, no. 11, pp. 114517-1-8.
- Harding, R, Davies, G, Tan, J et al. 2006, 'Identification by Photoluminescence and Positron Annihilation of Vacancy and Interstitial Instrinsic Defects in Ion-implanted Silicon', Journal of Applied Physics, vol. 100, pp. 073501-1-4.
- Harding, R, Davies, G, Hayama, S et al. 2006, 'Photoluminescence Response of Ion-implanted Silicon', Applied Physics Letters, vol. 89, no. 18, pp. 181917-1-3.
- Linnarsson, M, Janson, M, Nordell, N et al. 2006, 'Formation of Precipitates in Heavily Boron Doped 4H-SiC', Applied Surface Science, vol. 252, pp. 5316-5320.
- Sears, K, Tan, H, Buda, M et al. 2006, 'Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers', International Conference on Nanoscience and Nanotechnology (ICONN 2006), ed. C. Jagadish & G.Q.Max Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Brisbane Australia, pp. 505-508.
- Sears, K, Tan, H, Wong Leung, Y et al. 2006, 'The Role of Arsine in the Self-assembled Growth of InAs/GaAs Quantum Dots by Metal Organic Chemical Vapor Deposition', Journal of Applied Physics, vol. 99, no. 4, pp. 044908-1-5.
- Sears, K, Wong Leung, Y, Tan, H et al. 2005, 'InAs Quantum Dots Grown on InGaAs Buffer Layers by Metal-Organic Chemical Vapor Deposition', Journal of Crystal Growth, vol. 281, pp. 290-296.
- Williams, J, Kucheyev, S, Tan, H et al. 2005, 'Ion Irradiation-induced Disordering of Semiconductors: Defect Structures and Applications', Philosophical Magazine, vol. 85, no. 4-7, pp. 677-687.
- Sears, K, Wong Leung, Y, Buda, M et al. 2005, 'Growth and Characterisation of InAs/GaAs Quantum Dots grown by MOCVD', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004), ed. Aleksandar D. Rakic and Yew Tong Yeow, Institute of Electrical and Electronics Engineers (IEEE Inc), USA, pp. 1-4.
- Gareso, P, Tan, H, Wong Leung, Y et al. 2005, 'Proton Irradiation Induced Intermixing in InxGa1_xAs/InP Quantum Wells', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004), ed. Aleksandar D. Rakic and Yew Tong Yeow, Institute of Electrical and Electronics Engineers (IEEE Inc), USA, pp. 93-96.
- Wong Leung, Y, Linnarsson, M, Svensson, B et al. 2005, 'Ion-Implantation-Induced Extended Defect Formation in (0001) and (1120) 4H-SiC', Physical Review B: Condensed Matter and Materials, vol. 71, no. 16, pp. 165210-1-13.
- Slotte, J, Saarinen, K, Janson, M et al. 2005, 'Fluence, Flux and Implantation Temperature Dependence of Ion-Implantation-Induced Defect Production in 4H-SiC', Journal of Applied Physics, vol. 97, no. 3, pp. 033513-1-7.
- Harding, R, Davies, G, Coleman, P et al. 2003, 'Study of defects in ion-implanted silicon using photoluminescence and positron annihilation', Physica B, vol. 340-342, pp. 738-742.
- Williams, J, Elliman, R, Tan, H et al. 2003, 'Production and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications', National Conference and Exhibition on Nanotechnology 2003, ed. R Wuhrer, Institute of Materials Engineering Australasia, Melbourne, pp. 74-80.
- Kuznetsov, A, Wong Leung, Y, Hallen, A et al. 2003, 'Dynamic Annealing in Ion Implanted SiC: Flux versus Temperature Dependance', Journal of Applied Physics, vol. 94, no. 11, pp. 7112-7115.
- Sears, K, Buda, M, Wong Leung, Y et al. 2003, 'Influence of Rapid Thermal Annealing on a 30 Stack InAs/GaAs Quantum Dot Infrared Photodetector', Journal of Applied Physics, vol. 94, no. 8, pp. 5283-5289.
- Wong Leung, Y, Janson, M & Svensson, B 2003, 'Effect of Crystal Orientation on the Implant Profile of 60keV Al into 4H-SiC Crystals', Journal of Applied Physics, vol. 93, no. 11, pp. 8914-8917.
- Buda, M, Hay, J, Tan, H et al. 2003, 'Low Loss, Thin p-clad 980-nm InGaAs Semiconductor Laser Diodes with an Asymmetric Structure Design', IEEE Journal of Quantum Electronics, vol. 39, no. 5, pp. 625-633.
- Leveque, P, Hallen, A, Svensson, B et al. 2003, 'Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon', European Physical Journal - Applied Physics, vol. 23, pp. 5-9.
- Wong Leung, Y, Linnarsson, M & Svensson, B 2003, 'A Comparison of Extended Defect Formation Induced by Ion Implantation in (0001) and (1120)4H-SiC', Physica B, vol. 340-342, pp. 132-136.
- Linnarsson, M, Zimmermann, U, Wong Leung, Y et al. 2003, 'Solubility Limits of Dopants in 4H-SiC', Applied Surface Science, vol. 203-204, pp. 427-432.
- Leveque, P, Kortegaard-Nielsen, H, Pellegrino, P et al. 2003, 'Vacancy and Interstitial Depth Profiles in Ion-implanted Silicon', Journal of Applied Physics, vol. 93, no. 2, pp. 871-877.
- Fu, L, Wong Leung, Y, Deenapanray, P et al. 2002, 'Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide', Journal of Applied Physics, vol. 92, no. 7, pp. 3579-3583.
- Pellegrino, P, Leveque, P, Kortegaard-Nielsen, H et al. 2002, 'Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon', Nuclear Instruments and Methods in Physics Research: Section B, vol. 186, pp. 334-338.
- Monakhov, E, Wong Leung, Y, Kuznetsov, A et al. 2002, 'Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation', Physical Review B, vol. 65, pp. 245201-1-9.
- Davies, G, Harding, R, Jin, T et al. 2002, 'Optical Studies of Ion-Implantation Centres in Silicon', Nuclear Instruments and Methods in Physics Research: Section B, vol. 186, pp. 1-9.
- Bradby, J, Williams, J, Wong Leung, Y et al. 2002, 'Spherical Indentation of Compound Semiconductors', Philosophical Magazine A, vol. 82, no. 10, pp. 1931-1939.
- Bradby, J, Kucheyev, S, Williams, J et al. 2002, 'Indentation-induced Damage in GaN Epilayers', Applied Physics Letters, vol. 80, no. 3, pp. 383-385.
- Bradby, J, Williams, J, Wong Leung, Y et al. 2002, 'Nanoindentation-induced Deformation of Ge', Applied Physics Letters, vol. 80, no. 15, pp. 2651-2653.
- Wong Leung, Y, Jagadish, C, Conway, M et al. 2001, 'Effect of implant temperature on secondary defects created by MeV Sn implantation is silicon', Journal of Applied Physics, vol. 89, pp. 2556-2559.
- MacDonald, D, Cuevas, A & Wong Leung, Y 2001, 'Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements', Journal of Applied Physics, vol. 89, no. 12, pp. 7932-7939.
- Williams, J, Ridgway, M, Conway, M et al. 2001, 'Interaction of Defects and Metals with Nanocavities in Silicon', Nuclear Instruments and Methods in Physics Research: Section B, vol. 178, pp. 33-43.
- Stritzker, B, Petravic, M, Wong Leung, Y et al. 2001, 'Selectivity of Nanocavities and Dislocations for Gettering of Cu and Fe in Silicon', Applied Physics Letters, vol. 78, no. 18, pp. 2682-2684.
- Bradby, J, Williams, J, Wong Leung, Y et al. 2001, 'Mechanical Deformation of InP and GaAs by Spherical Indentation', Applied Physics Letters, vol. 78, no. 21, pp. 3235-3237.
- Bradby, J, Williams, J, Wong Leung, Y et al. 2001, 'Mechanical Deformation in Silicon by Micro-indentation', Journal of Materials Research, vol. 16, no. 5, pp. 1500-1507.
- Liu, A, McCallum, J & Wong Leung, Y 2001, 'Defect Formation Due to the Crystallization of Deep Amorphous Volumes Formed in Silicon by Mega Electron Volt (MeV) Ion Implantation', Journal of Materials Research, vol. 16, no. 11, pp. 3229-3237.
- Bradby, J, Williams, J, Wong Leung, Y et al. 2001, 'Mechanical Deformation of Crystalline Silicon During Nanoindentation', Materials Research Society Meeting Fall 2000, ed. Moss, S; Heinig, K.-H; Poker, D.B, Materials Research Society, Warrendale, USA, pp. Q8.10.1-6.
- Liu, A, McCallum, J & Wong Leung, Y 2001, 'The crystallisation of deep amorphous wells in silicon produced by ion implantation', Nuclear Instruments and Methods in Physics Research: Section B, vol. 175-177, pp. 164-168.
- Linnarsson, M, Janson, M, Zimmermann, U et al. 2001, 'Solubility Limit and Precipitate Formation in Al-doped 4H-SiC Epitaxial Material', Applied Physics Letters, vol. 79, no. 13, pp. 2016-2018.
- Williams, J, Ridgway, M, Conway, M et al. 2001, 'Interactions of Point Defects and Impurities With Open Volume Defects in Silicon', Materials Research Society Meeting Fall 2000, ed. Moss, S; Heinig, K.-H; Poker, D.B, Materials Research Society, Warrendale, USA, pp. 02.4.1-02.4.11.
- Pellegrino, P, Leveque, P, Wong Leung, Y et al. 2001, 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon: experimental observation', Applied Physics Letters, vol. 78, no. 22, pp. 3442-3444.
- Williams, J, Conway, M, Williams, B et al. 2001, 'Direct Observation of Voids in the Vacancy Excess Region of Ion Bombarded Silicon', Applied Physics Letters, vol. 78, no. 19, pp. 2867-2869.
- Stritzker, B, Petravic, M, Wong Leung, Y et al 2001, 'Efficiency of dislocations and cavities for gettering of Cu and Fe in silicon', Nuclear Instruments and Methods in Physics Research: Section B, vol. 175-177, pp. 154-158.
- Bradby, J, Williams, J, Wong Leung, Y et al. 2000, 'Transmission Electron Microscopy Observation of Deformation Microstructure under Spherical Indentation in Silicon', Applied Physics Letters, vol. 77, pp. 3749-3751.
- Wong Leung, Y, Fatima, S, Jagadish, C et al. 2000, 'Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon', Journal of Applied Physics, vol. 88, pp. 1312-1318.
- Wong Leung, Y, Fatima, S, Jagadish, C et al. 2000, 'Effect of implant temperature on extended defects created by ion implantation in silicon', Defects and Diffusion Forum Part A: Defect and Diffusion Forum, vol. 183, no. 1, pp. 163-169.
- Williams, J, Chen, Y, Wong Leung, Y et al. 1999, 'Ultra-Micro-Indentation of Silicon and Compound Semiconductors with Spherical Indenters', Journal of Materials Research, vol. 14, no. 6, pp. 2338-2343.
- Williams, J, Conway, M, Wong Leung, Y et al. 1999, 'The Role of Oxygen on the Stability of Gettering of Metals to Cavities in Silicon', Applied Physics Letters, vol. 75, no. 16, pp. 2424-2426.
- Wong Leung, Y, Williams, J, Kinomura, A et al. 1999, 'Diffusion and Transient Trapping of Metals in Silicon', Physical Review B, vol. 59, no. 11, pp. 7990-7998.
- Li, Z, Wong Leung, Y, Deenapanray, P et al. 1999, 'The Role of Fe on the Crystallisation of a-Si3N4 from Amorphous Si-N Formed by Ion Implantation', Nuclear Instruments and Methods in Physics Research: Section B, vol. 148, pp. 534-539.
- Fatima, S, Wong Leung, Y, Fitzgerald, J et al. 1999, 'Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si', Applied Physics Letters, vol. 74, pp. 1141-1143.
Projects and Grants
Grants information is drawn from ARIES. To add or update Projects or Grants information please contact your College Research Office.
- Towards phase, composition and homogeneity control in ternary nanowires (Primary Investigator)
- Understanding the structure and unusual properties of ion implanted amorphous germanium (Secondary Investigator)
- State-of-the-art Hall effect system for detailed electrical characterisation in semiconductors (Primary Investigator)
- An Analytical Transmission Electron Microscope for the Investigation of Functional Materials, Earth Processes and Novel Condensed Matter (Secondary Investigator)
- Defect-induced luminescence from ion-implanted silicon: Towards silicon photonics applications (Secondary Investigator)
- Dopants, defects and related issues in Zinc Oxide (Primary Investigator)
