Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon
Citation
Wong Leung, Y, Fatima, S, Jagadish, C et al. 2000, 'Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon', Journal of Applied Physics, vol. 88, pp. 1312-1318.Year
2000ANU Authors
Field of Research
- Surfaces And Structural Properties Of Condensed Matter