A Comparison of Extended Defect Formation Induced by Ion Implantation in (0001) and (1120)4H-SiC

Citation

Wong Leung, Y, Linnarsson, M & Svensson, B 2003, 'A Comparison of Extended Defect Formation Induced by Ion Implantation in (0001) and (1120)4H-SiC', Physica B, vol. 340-342, pp. 132-136.

Year

2003

ANU Authors

Field of Research

  • Materials Engineering Not Elsewhere Classified

Updated:  05 July 2024 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers