Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon
Citation
Pellegrino, P, Leveque, P, Kortegaard-Nielsen, H et al. 2002, 'Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon', Nuclear Instruments and Methods in Physics Research: Section B, vol. 186, pp. 334-338.Year
2002Field of Research
- Electrical And Electronic Engineering Not Elsewhere Classified
