Effect of implant temperature on extended defects created by ion implantation in silicon
Citation
Wong Leung, Y, Fatima, S, Jagadish, C et al. 2000, 'Effect of implant temperature on extended defects created by ion implantation in silicon', Defects and Diffusion Forum Part A: Defect and Diffusion Forum, vol. 183, no. 1, pp. 163-169.Year
2000ANU Authors
Field of Research
- Metals And Alloy Materials