Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si
Citation
Fatima, S, Wong Leung, Y, Fitzgerald, J et al. 1999, 'Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si', Applied Physics Letters, vol. 74, pp. 1141-1143.Year
1999ANU Authors
Field of Research
- Structural Geology