Areas of expertise

• Elemental Semiconductors 091204
• Photodetectors, Optical Sensors And Solar Cells 090605
• Condensed Matter Physics 0204
• Electrical And Electronic Engineering 0906

Biography

Publications

• Rougieux, F, Samundsett, C, Fong, K et al. 2016, 'High efficiency UMG silicon solar cells: impact of compensation on cell parameters', Progress in Photovoltaics: Research and Applications, vol. 24, no. 5, pp. 725-734.
• Sio, H & MacDonald, D 2016, 'Direct comparison of the electrical properties of multicrystalline silicon materials for solar cells: Conventional p-type, n-type and high performance p-type', Solar Energy Materials and Solar Cells, vol. 144, pp. 339-346.
• Nguyen, H, Rougieux, F, Yan, D et al 2016, 'Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline silicon solar cells using micro-photoluminescence spectroscopy', Solar Energy Materials and Solar Cells, vol. 145, no. 3, pp. 403-411pp.
• Grant, N, Markevich, V, Mullins, J et al 2016, 'Thermal activation and deactivation of grown-in defects limiting the lifetime of float-zone silicon', Physica Status Solidi: Rapid Research Letters, vol. 10, no. 6, pp. 443-447pp.
• Nguyen, H, Phang, S, Wong Leung, Y et al. 2016, 'Photoluminescence Excitation Spectroscopy of Diffused Layers on Crystalline Silicon Wafers', IEEE Journal of Photovoltaics, vol. 6, no. 3, pp. 746-753.
• Phang, S, Sio, H & MacDonald, D 2016, 'Applications of carrier de-smearing of photoluminescence images on silicon wafers', Progress in Photovoltaics: Research and Applications, vol. 24, no. 12, pp. 1547-1553.
• Sio, H, Chong, T, Surve, S et al. 2016, 'Characterizing the Influence of Crystal Orientation on Surface Recombination in Silicon Wafers', IEEE Journal of Photovoltaics, vol. 6, no. 2, pp. 412-418.
• Han, Y, Franklin, E, Fell, A et al 2016, 'Low-temperature micro-photoluminescence spectroscopy on laser-doped silicon with different surface conditions', Applied Physics A: Materials Science and Processing, vol. 122, no. 4, pp. -.
• Zheng, P, Rougieux, F, Samundsett, C et al. 2016, 'Upgraded metallurgical-grade silicon solar cells with efficiency above 20%', Applied Physics Letters, vol. 108, no. 12.
• Rougieux, F, Grant, N, MacDonald, D et al 2015, 'Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?', IEEE Photovoltaic Specialist Conference, PVSC 2015, IEEE, TBC, pp. 1-4.
• Sio, H, Phang, S, Nguyen, H et al. 2015, 'COMPARISON OF RECOMBINATION ACTIVITY OF GRAIN BOUNDARIES IN VARIOUS MULTICRYSTALLINE SILICON MATERIALS', European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC 2015, Fraunhofer ISE, Germany, pp. 328-333.
• Liu, A, Sun, C & MacDonald, D 2015, 'HYDROGEN PASSIVATION OF INTERSTITIAL IRON IN SILICON BY ANNEALING WITH PECVD SILICON NITRIDE FILMS', European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC 2015, Fraunhofer ISE, Germany, pp. 623-625.
• Sio, H, Phang, S, Trupke, T et al. 2015, 'Impact of Phosphorous Gettering and Hydrogenation on the Surface Recombination Velocity of Grain Boundaries in p-Type Multicrystalline Silicon', IEEE Journal of Photovoltaics, vol. 5, no. 5, pp. 1357-1365.
• Nguyen, H, Han, Y, Ernst, M et al 2015, 'Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy', Applied Physics Letters, vol. 107, no. 2, pp. 1-5.
• Yang, J, Lu, T, Win Myint, Y et al 2015, 'Robust Excitons and Trions in Monolayer MoTe2', ACS Nano, vol. 9, no. 6, pp. 6603-6609.
• Schinke, C, Peest, P, Schmidt, J et al. 2015, 'Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon', AIP Advances, vol. 5, no. 6, pp. 1-22.
• Sun, C, Liu, A, Rougieux, F et al 2015, 'Lifetime Spectroscopy and Hydrogenation of Chromium in n- and p-type Cz Silicon', Energy Procedia, vol. 77, pp. 646-650.
• Nguyen, H, Rougieux, F, Wang, F et al 2015, 'Effects of Solar Cell Processing Steps on Dislocation Luminescence in Multicrystalline Silicon', Energy Procedia, vol. 77, pp. 619-625.
• Schinke, C, Peest, P, Bothe, K et al. 2015, 'Experimental Determination of the Uncertainty of the Absorption Coefficient of Crystalline Silicon', Energy Procedia, vol. 77, pp. 170-178.
• Sun, c, Liu, A, Phang, S et al. 2015, 'Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon', Journal of Applied Physics, vol. 118, no. 8, pp. 1-10.
• MacDonald, D, Liu, A, Nguyen, H et al. 2015, 'Physical Modelling of Luminescence Spectra from Crystalline Silicon', European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC 2015, Fraunhofer ISE, Germany, pp. 440-443.
• Yang, X, Fell, A, Franklin, E et al 2015, 'High efficiency n-type silicon solar cells with local back surface fields formed by Laser Chemical Processing', IEEE Photovoltaic Specialist Conference, PVSC 2015, IEEE, TBC, pp. -.
• Nguyen, H, Rougieux, F, Baker-Finch, S et al 2015, 'Impact of carrier profile and rear-side reflection on photoluminescence spectra in planar crystalline silicon wafers at different temperatures', IEEE Journal of Photovoltaics, vol. 5, no. 1, pp. 77-81.
• Grant, N, Rougieux, F, MacDonald, D et al 2015, 'Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers', Journal of Applied Physics, vol. 117, no. 5, pp. 1-8pp.
• Sun, C, Rougieux, F & MacDonald, D 2015, 'A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon', Journal of Applied Physics, vol. 117, no. 4, pp. 1-11pp.
• Zheng, P, Rougieux, F, Grant, N et al. 2015, 'Evidence for vacancy-related recombination active defects in as-grown N-type czochralski silicon', IEEE Journal of Photovoltaics, vol. 5, no. 1, pp. 183-188.
• Nguyen, H, Rougieux, F, Wang, F et al. 2015, 'Micrometer-Scale Deep-Level Spectral Photoluminescence from Dislocations in Multicrystalline Silicon', IEEE Journal of Photovoltaics, vol. 5, no. 3, pp. 799-804.
• Nguyen, H, Yan, D, Wang, F et al. 2015, 'Micro-photoluminescence spectroscopy on heavily-doped layers of silicon solar cells', Physica Status Solidi: Rapid Research Letters, vol. 9, no. 4, pp. 230-235.
• Barugkin, C, Cong, J, Duong, T et al 2015, 'Ultralow absorption coefficient and temperature dependence of radiative recombination of CH3NH3PbI3 perovskite from photoluminescence', Journal of Physical Chemistry Letters, vol. 6, no. 5, pp. 767-772.
• Rougieux, F, Grant, N, Barugkin, C et al 2015, 'Influence of Annealing and Bulk Hydrogenation on Lifetime Limiting Defects in Nitrogen-Doped Floating Zone Silicon', IEEE Journal of Photovoltaics, vol. 5, no. 2, p. 495.
• Zheng, P, Rougieux, F, MacDonald, D et al. 2014, 'Measurement and parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level', IEEE Journal of Photovoltaics, vol. 4, no. 2, pp. 560-565.
• Liu, A & MacDonald, D 2014, 'Precipitation of iron in multicrystalline silicon during annealing', Journal of Applied Physics, vol. 115, no. 11.
• Sio, H, Phang, S, Trupke, T et al. 2014, 'An accurate method for calibrating photoluminescence-based lifetime images on multi-crystalline silicon wafers', Solar Energy Materials and Solar Cells, vol. 131, pp. 77-84.
• Mitchell, B, MacDonald, D, Schon, J et al 2014, 'Imaging as-grown interstitial iron concentration on boron-doped silicon bricks via spectral photoluminescence', IEEE Journal of Photovoltaics, vol. 4, no. 5, pp. 1185-1196.
• Yang, X, Müller, R, Shalav, A et al. 2014, 'Boron implanted, laser annealed p(+) emitter for n-type interdigitated back-contact solar cells', Energy Procedia, vol. 55, pp. 320-325.
• Fell, A, Walter, D, Yang, X et al 2014, 'Quantitative surface recombination imaging of single side processed silicon wafers obtained by photoluminescence modeling', 4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014, ed. e A.Sinton R.Hahn G., Elsevier, Netherlands, pp. 63-70.
• Rougieux, F, Grant, N & MacDonald, D 2014, 'Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers', E-MRS Spring Meeting 2014 Symposium Y - Advanced materials and characterization techniques for solar cells II, 2014, ed. H.Turan R.Valenta J., Conference Organising Committee, TBC, pp. 81-84.
• Mitchell, B, Weber, J, Juhl, M et al 2014, 'Photoluminescence imaging of silicon bricks', 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013, ed. J D Murphy, Conference Organising Committee, Oxford UK, pp. 118-127.
• MacDonald, D, Liu, A & Phang, S 2014, 'External and internal gettering of interstitial iron in silicon for solar cells', 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013, ed. J D Murphy, Conference Organising Committee, Oxford UK, pp. 26-33.
• Zheng, P, Rougieux, F, MacDonald, D et al. 2014, 'Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon', 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, IEEE, USA, pp. 129-134.
• Wan, Y, Samundsett, C, Kho, T et al. 2014, 'Towards industrial advanced front-junction n-type silicon solar cells', 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, IEEE, USA, pp. 862-865.
• Liu, A & MacDonald, D 2014, 'Precipitation of interstitial iron in multicrystalline silicon', Solid State Phenomena, vol. 205-206, pp. 34-39.
• Nguyen, H, Rougieux, F, Mitchell, B et al 2014, 'Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence', Journal of Applied Physics, vol. 115, no. 4, pp. 043710/1-8.
• Rougieux, F & MacDonald, D 2014, 'Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density', Applied Physics Letters, vol. 104, no. 12, pp. 1-4.
• Nguyen, H, Baker-Finch, S & MacDonald, D 2014, 'Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence', Applied Physics Letters, vol. 104, no. 11, pp. 1-3.
• Sun, C, Rougieux, F & MacDonald, D 2014, 'Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon', Journal of Applied Physics, vol. 115, no. 21, pp. 1-9.
• Niewelt, T, Lim, S, Holtkamp, J et al. 2014, 'Interstitial oxygen imaging from thermal donor growth-A fast photoluminescence based method', Solar Energy Materials and Solar Cells, vol. 131, pp. 117-123.
• Sio, H, Trupke, T & MacDonald, D 2014, 'Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging', Journal of Applied Physics, vol. 116, no. 24, pp. 1-9.
• Liu, A, Sun, C & MacDonald, D 2014, 'Hydrogen passivation of interstitial iron in boron-doped multicrystalline silicon during annealing', Journal of Applied Physics, vol. 116, no. 19, pp. 1-11.
• Walter, D, Fell, A, Franklin, E et al 2014, 'The impact of silicon CCD photon spread on quantitative analyses of luminescence images', IEEE Journal of Photovoltaics, vol. 4, no. 1, pp. 368-373.
• Ho F, McKeon, J, MacDonald, D & Catchpole, K 2014, 'Three-dimensional nanotub submicrometer diffraction gratings for solar cells', Applied Optics, vol. 53, no. 29, pp. 6840-6845.
• Lim, S, Forster, M, Zhang, X et al. 2013, 'Applications of Photoluminescence Imaging to Dopant and Carrier Concentration Measurements of Silicon Wafers', IEEE Journal of Photovoltaics, vol. 3, no. 2, pp. 649-655.
• Yang, X, MacDonald, D, Fell, A et al. 2013, 'Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence', Journal of Applied Physics, vol. 114, no. 5, p. 6.
• Lim, S, Rougieux, F & MacDonald, D 2013, 'Boron-oxygen defect imaging in p-type Czochralski silicon', Applied Physics Letters, vol. 103, no. 9, p. 4.
• Rougieux, F, Grant, N & MacDonald, D 2013, 'Thermal deactivation of lifetime-limiting grown-in point defects in n-type Czochralski silicon wafers', Physica Status Solidi: Rapid Research Letters, vol. 7, no. 9, pp. 616-618.
• Phang, S, Sio, H & MacDonald, D 2013, 'Carrier de-smearing of photoluminescence images on silicon wafers using the continuity equation', Applied Physics Letters, vol. 103, no. 19, pp. 192112-1 - 192112-4.
• Sio, H, Phang, S, Wan, Y et al. 2013, 'The influence of crystal orientation on surface passivation in multi-crystalline silicon', 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, IEEE, Tampa, FL, pp. 1770-1775.
• Hargreaves, S, Zhang, X, Cuevas, A et al 2013, 'Passivation of Silicon Wafers by Sputter-Deposited a-Si:H Films', 28th European Photovoltaic Solar Energy Conference and Exhibition 2013, WIP-Renewable Energies, Munich Germany, pp. 1064-1067pp.
• Yang, X, Fell, A, Xu, L et al 2013, 'Laser chemical processing (LCP) doping formed through differenct dielectric layers', 28th European Photovoltaic Solar Energy Conference and Exhibition 2013, WIP-Renewable Energies, Munich Germany, pp. 1057-1060.
• Cuevas, A, MacDonald, D & Sinton, R 2013, 'Characterization and Diagnosis of Silicon Wafers, Ingots, and Solar Cells', in Augustin McEvoy, Tom Makvart, Luis Castaner (ed.), Solar Cells. Materials, Manufacture and Operation, Elsevier Inc., London, UK, Waltham, MA and San Diego, CA, pp. 469-499.
• Phang, S, Liang, W, Wolpensinger, B et al. 2013, 'Tradeoffs between impurity gettering, bulk degradation, and surface passivation of boron-rich layers on silicon solar cells', IEEE Journal of Photovoltaics, vol. 3, no. 1, pp. 261-266.
• Lim, S, Forster, M & MacDonald, D 2013, 'Estimation of solidification interface shapes in a boron-phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging', Journal of Crystal Growth, vol. 364, no. 364, pp. 67-73.
• Barugkin, C, Wan, Y, MacDonald, D et al 2013, 'Evaluating plasmonic light trapping with photoluminescence', IEEE Journal of Photovoltaics, vol. 3, no. 4, pp. 1292-1297.
• MacDonald, D, Phang, S, Rougieux, F et al. 2012, 'Iron-rich particles in heavily contaminated multicrystalline silicon wafers and their response to phosphorus gettering', Semiconductor Science and Technology, vol. 27, no. 12, p. 5.
• Herlufsen, S, MacDonald, D, Bothe, K et al 2012, 'Imaging of the interstitial iron concentration in crystalline silicon by measuring the dissociation rate of iron-boron pairs', Physica Status Solidi: Rapid Research Letters, vol. 6, no. 1, pp. 1-3.
• MacDonald, D 2012, 'The emergence of n-type silicon for solar cell manufacture', Australia and New Zealand Solar Energy Society Conference (Solar 2012), Australian Solar Energy Society, Sydney NSW, p. 6.
• Rougieux, F, Forster, M, MacDonald, D et al 2012, 'Impact of minority-impurity scattering on the carrier mobility in compensated silicon', International Photovoltaic Science and Engineering Conference (PVSEC 2012), ed. YANG Deren, Chinese Renewable Energy Society, Hangzhou China, p. 4.
• Wang, S & MacDonald, D 2012, 'Temperature dependence of Auger recombination in highly injected crystalline silicon', Journal of Applied Physics, vol. 112, no. 11, p. 4.
• MacDonald, D, Phang, S & Liu, A 2012, 'Detection and reduction of iron impurities in silicon solar cells', International Symposium on Advanced Science and Technology of Silicon Materials 2012, Japan Society for the Promotion of Science, Tokyo, Japan, p. 4.
• Liu, A, Walter, D, Phang, S et al. 2012, 'Imaging and modelling the internal gettering of interstitial iron by grain boundaries in multicrystalline silicon', IEEE Photovoltaic Specialists Conference (PVSC 2012), Curran Associates, Inc., Austin, TX, USA.
• Sio, H, Trupke, T, Phang, S et al. 2012, 'Electrical properties of different types of grain boundaries in multicrystalline silicon by photoluminescence imaging', European Photovoltaic Solar Energy Conference EUPVSEC 2012, ed. S.Nowak, A.Jager-Waldau, P.Helm, WIP-Renewable Energies, Munich, Germany.
• Herlufsen, S, MacDonald, D, Bothe, K et al 2012, 'Imaging of the interstitial iron concentration in B-doped c-Si based on time-dependent photoluminescence imaging', European Photovoltaic Solar Energy Conference EUPVSEC 2012, ed. S.Nowak, A.Jager-Waldau, P.Helm, WIP-Renewable Energies, Munich, Germany, p. 4.
• Walter, D, Liu, A, Franklin, E et al 2012, 'Contrast Enhancement of Luminescence Images via Point-Spread Deconvolution', IEEE Photovoltaic Specialists Conference (PVSC 2012), Curran Associates, Inc., Austin, TX, USA, pp. 307-312.
• Lim, S, Forster, M, Zhang, X et al. 2012, 'Photoluminescence imaging for net doping measurements of surface limited silicon wafers', International Photovoltaic Science and Engineering Conference (PVSEC 2012), ed. YANG Deren, Chinese Renewable Energy Society, Hangzhou China, p. 4.
• Liu, A, Walter, D, Phang, S et al. 2012, 'Investigating internal gettering of iron at grain boundaries in multicrystalline silicon via photoluminescence imaging', IEEE Journal of Photovoltaics, vol. 2, no. 4, pp. 479-484.
• Rougieux, F, Phang, S, Shalav, A et al. 2012, 'Acceptor-related metastable defects in compensated n-type silicon', International Photovoltaic Science and Engineering Conference (PVSEC 2012), ed. YANG Deren, Chinese Renewable Energy Society, Hangzhou China, p. 6.
• Mitchell, B, Weber, J, Walter, D et al 2012, 'On the method of photoluminescence spectral intensity ratio imaging of silicon bricks: Advances and limitations', Journal of Applied Physics, vol. 112, no. 6, pp. 1-13.
• Sio, H, Xiong, Z, Trupke, T et al 2012, 'Imaging crystal orientations in multicrystalline silicon wafers via photoluminescence', Applied Physics Letters, vol. 101, no. 8, p. 4.
• Liu, A, Walter, D & MacDonald, D 2012, 'Studying precipitation and dissolution of iron in multicrystalline silicon wafers during annealing', International Photovoltaic Science and Engineering Conference (PVSEC 2012), ed. YANG Deren, Chinese Renewable Energy Society, Hangzhou China, p. 4.
• Rougieux, F, Zheng, P, Thiboust, M et al. 2012, 'A Contactless Method for Determining the Carrier Mobility Sum in Silicon Wafers', IEEE Journal of Photovoltaics, vol. 2, no. 1, pp. 41-46.
• Cuevas, A, Forster, M, Rougieux, F et al 2012, 'Compensation Engineering for Silicon Solar Cells', International Conference on Materials for Advanced Technologies 2011, ed. Junqiao Xiong, Elsevier, On line only, pp. 67-77.
• Rougieux, F, Zheng, P, Thiboust, M et al. 2011, 'Contactless determination of the injection dependent carrier mobility sum in silicon', IEEE Photovoltaic Specialists Conference PVSC 2011, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway USA, pp. 41 - 46.
• Lim, S, Phang, S, Trupke, T et al. 2011, 'Dopant concentration imaging in crystalline silicon wafers by band-to-band photoluminescence', Journal of Applied Physics, vol. 110, no. 11, pp. 113712-7.
• Voronkov, V, Falster, R, Batunina, A et al 2011, 'Lifetime degradation mechanism in boron-doped Czochralski silicon', E-MRS Fall Meeting 2010, Symposium C 'Materials Devices and Economics Issues for Tomorrow's Photovoltaics', Conference Organising Committee, Warsaw Poland, pp. 46-50.
• Rougieux, F, MacDonald, D & Cuevas, A 2011, 'Transport properties of p-type compensated silicon at room temperature', Progress in Photovoltaics: Research and Applications, vol. 19, no. 7, pp. 787-793.
• Coletti, G, Bronsveld, P, Hahn, G et al 2011, 'Impact of metal contamination in silicon solar cells', Advanced Functional Materials, vol. 21, no. 5, pp. 879-890.
• MacDonald, D & Cuevas, A 2011, 'Recombination in compensated crystalline silicon for solar cells', Journal of Applied Physics, vol. 109, no. 4, p. 8.
• Tan, J, MacDonald, D, Rougieux, F et al 2011, 'Accurate measurement of the formation rate of iron-boron pairs in silicon', Semiconductor Science and Technology, vol. 26, no. 5, pp. 1-5.
• Lim, S & MacDonald, D 2011, 'Measuring dopant concentrations in p-type silicon using iron-acceptor pairing monitored by band-to-band photoluminescence', Solar Energy Materials and Solar Cells, vol. 95, no. 8, pp. 2485-2489.
• Rougieux, F, Lim, B, Schmidt, J et al 2011, 'Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon', Journal of Applied Physics, vol. 110, no. 6, pp. 063708-5.
• MacDonald, D, Liu, A, Cuevas, A et al 2011, 'The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon', Physica Status Solidi A, vol. 208, no. 3, pp. 559-563.
• Liu, A, Fan, Y & MacDonald, D 2011, 'Interstitial iron concentrations across multicrystalline silicon wafers via photoluminescence imaging', Progress in Photovoltaics: Research and Applications, vol. 19, no. 6, pp. 649-657.
• Rougieux, F, Forster, M, MacDonald, D et al 2011, 'Recombination Activity and Impact of the Boron-Oxygen-Related Defect in Compensated n-Type Silicon', IEEE Journal of Photovoltaics, vol. 1, no. 1, pp. 54-58.
• Phang, S & MacDonald, D 2011, 'Direct comparison of boron, phosphorus, and aluminum gettering of iron in crystalline silicon', Journal of Applied Physics, vol. 109, no. 7, pp. 073521-6.
• Tajima, M, Iwai, T, Toyota, H et al 2011, 'Donor-acceptor pair luminescence in compensated Si for solar cells', Journal of Applied Physics, vol. 110, no. 4, pp. 043506-5.
• Lim, S, Phang, S, Trupke, T et al. 2011, 'Dopant Concentration Imaging in Crystalline Silicon Wafers by Band-To-Band Photoluminescence', European Photovoltaic Solar energy conference and Exhibition 2011, ed. Martin A. Green, Ryne P. Raffaelle, Tim M. Bruton, John Wiley & Sons Inc, Hamburg Germany, pp. 1-4pp.
• Fan, Y, Tan, J, Phang, S et al. 2010, 'Iron imaging in multicrystalline silicon wafers via photoluminescence', IEEE Photovoltaic Specialists Conference, PVSC 2010, IEEE, Honolulu, HI, pp. 000439-000442.
• Phang, S & MacDonald, D 2010, 'Boron, phosphorus and aluminum gettering of iron in crystalline silicon: Experiments and modelling', IEEE Photovoltaic Specialists Conference, PVSC 2010, IEEE, Honolulu, HI, pp. 000352 - 000356.
• Tan, J, MacDonald, D, Rougieux, F et al 2010, 'A Revised Equation for the Formation Rate of Iron-Boron Pairs in Silicon', European Photovoltaic Solar Energy Conference 2010, ed. Conference Program Committee, Conference Organising Committee, Valencia Spain, pp. 437-440.
• MacDonald, D, Rougieux, F, Mansoulie, Y et al 2010, 'Synchrotron studies of solar-grade silicon feedstock and wafers', Australia and New Zealand Solar Energy Society Conference (Solar 2010), ed. R. Campbell-Howe, Australian Solar Energy Society, Australia, pp. 1-5.
• Tajima, M, Iwai, T, Toyota, H et al 2010, 'Pair Luminescence between P Donors and B Acceptors in Compensated Si', Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes 2010, National Renewable Energy Laboratory (NREL), USA, pp. 1-6.
• Tajima, M, Iwai, T, Toyota, H et al 2010, 'Fine Structure Due to Donor-Acceptor Pair Luminescence in Compensated Si', Applied Physics Express, vol. 3, no. 7, p. 3.
• Rougieux, F, MacDonald, D, McIntosh, K et al 2010, 'Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon', Semiconductor Science and Technology, vol. 25, no. 5, p. 5.
• MacDonald, D, Rougieux, F, Mansoulie, Y et al 2010, 'Scanning X-ray fluorescence microspectroscopy of metallic impurities in solar-grade silicon', Physica Status Solidi A, vol. 207, no. 8, pp. 1807-1810.
• Rougieux, F, MacDonald, D, Cuevas, A et al 2010, 'Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon', Journal of Applied Physics, vol. 108, no. 1, pp. 1-5.
• Paudyal, B, McIntosh, K, MacDonald, D et al 2010, 'Temperature dependent carrier lifetime studies of Mo in crystalline silicon', Journal of Applied Physics, vol. 107, no. 5, p. 5.
• MacDonald, D & Liu, A 2010, 'Recombination activity of iron-boron pairs in compensated p-type silicon', Physica Status Solidi B (On-line), vol. 247, no. 9, pp. 2218-2221.
• Lim, B, Rougieux, F, MacDonald, D et al 2010, 'Generation and annihilation of boron-oxygen-related recombination centers in compensated p- and n-type silicon', Journal of Applied Physics, vol. 108, no. 10, pp. 1-9.
• MacDonald, D, Peceros Sepulveda, K, Tan, J et al 2008, 'Gettering and Hydrogenation in n-Type Multicrystalline Silicon', European Photovoltaic Solar Energy Conference 2008, ed. Conference Program Committee, Conference Organising Committee, Munich, pp. 1475 - 1477.
• MacDonald, D, Cuevas, A, Di Sabatino, M et al 2008, 'Carrier lifetime studies of strongly compensated P-type czochralski silicon', European Photovoltaic Solar Energy Conference 2008, ed. Conference Program Committee, Conference Organising Committee, Munich, pp. 951 - 957.
• Paudyal, B, McIntosh, K, MacDonald, D et al 2009, 'Temperature Dependent Electron and Hole Capture Cross Sections of the Molybdenum in Silicon', European Photovoltaic Solar Energy Conference EUPVSEC 2009, ed. W. Sinke, H.Ossenbrink, P.Helm, WIP-Renewable Energies, Germany, pp. 981-984.
• Tan, J, Pascoe, A, MacDonald, D et al 2009, 'A Novel Method to Determine the Majority Carrier Mobility in P-Type Multi-Crystalline Silicone', European Photovoltaic Solar Energy Conference EUPVSEC 2009, ed. W. Sinke, H.Ossenbrink, P.Helm, WIP-Renewable Energies, Germany, pp. 489-491.
• MacDonald, D & Cuevas, A 2009, 'Carrier recombination and transport in compensated silicon, and prospects for 'compensation engineering'', Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes 2009, National Renewable Energy Laboratory (NREL), USA.
• Rougieux, F, MacDonald, D, McIntosh, K et al 2009, 'Oxidation-Induced Inversion Layer in Compensated P-Type Silicon', European Photovoltaic Solar Energy Conference EUPVSEC 2009, ed. W. Sinke, H.Ossenbrink, P.Helm, WIP-Renewable Energies, Germany, pp. 1086-1089.
• MacDonald, D, Liu, A, Rougieux, F et al 2009, 'Boron-Oxygen defects in compensated P-Type Czochralski Silicon', IEEE Photovoltaic Specialists Conference (PVSC 2009), Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway USA, pp. 1-6.
• MacDonald, D, Rougieux, F, Cuevas, A et al 2009, 'Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon', Journal of Applied Physics, vol. 105, no. 9, pp. 093704/1-7.
• Paudyal, B, McIntosh, K & MacDonald, D 2009, 'TEMPERATURE DEPENDENT ELECTRON AND HOLE CAPTURE CROSS SECTIONS OF IRON-CONTAMINATED BORON-DOPED SILICON', IEEE Photovoltaic Specialists Conference (PVSC 2009), Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway USA.
• Mitchell, J, MacDonald, D & Cuevas, A 2009, 'Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon', Applied Physics Letters, vol. 94, no. 16, pp. 162102/1-3.
• Lim, B, Liu, A, MacDonald, D et al 2009, 'Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon', Applied Physics Letters, vol. 95, pp. 232109/1-3.
• Paudyal, B, McIntosh, K & MacDonald, D 2009, 'Temperature dependent carrier lifetime studies on Ti-doped multicrystalline silicon', Journal of Applied Physics, vol. 105, pp. 124510/1-5.
• MacDonald, D & Tan, J 2008, 'Impurities in solar-grade silicon', Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV 2007, ed. H H Tan, J-C Chiao, L Faraone, C Jagadish, J Williams, A R Wilson, SPIE - The International Society for Optical Engineering, USA, p. 7.
• MacDonald, D, McLean, K, Deenapanray, P et al 2008, 'Electronically-coupled up-conversion: an alternative approach to impurity photovoltaics in crystalline silicon', Semiconductor Science and Technology, vol. 23, pp. 1-8.
• Paudyal, B, McIntosh, K, MacDonald, D et al 2008, 'The Implementation of Temperature Control to an Inductive-Coil Photoconductance Instrument for the Range of 0-2308C', Progress in Photovoltaics: Research and Applications, vol. 16, no. 7, pp. 609-613.
• Thomson, A, McIntosh, K & MacDonald, D 2008, 'EFFECTIVE LIFETIME CHARACTERISATION OF A ROOM TEMPERATURE META-STABLE DEFECT IN N-TYPE 5 ΩCM FZ PHOSPHORUS-DIFFUSED OXIDE-PASSIVATED SILICON', European Photovoltaic Solar Energy Conference 2008, ed. Conference Program Committee, Conference Organising Committee, Munich, pp. 517-521.
• Paudyal, B, McIntosh, K & MacDonald, D 2008, 'ELECTRON CAPTURE CROSS SECTION OF IRON-BORON PAIRS IN CRYSTALLINE SILICON OVER THE TEMPERATURE RANGE 0 - 100 oC', European Photovoltaic Solar Energy Conference 2008, ed. Conference Program Committee, Conference Organising Committee, Munich, pp. 1481-.
• McIntosh, K, Paudyal, B & MacDonald, D 2008, 'Generalized procedure to determine the dependence of steady-state photoconductance lifetime on the occupation of multiple defects', Journal of Applied Physics, vol. 16, no. 7, pp. 084503-1 to 084503-6.
• MacDonald, D, Cuevas, A & Geerligs, L 2008, 'Measuring dopant concentrations in compensated p-type crystalline silicon via iron-acceptor pairing', Applied Physics Letters, vol. 92, no. 20, pp. 202119-1 to 202119-3.
• MacDonald, D, Tan, J & Trupke, T 2008, 'Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence', Journal of Applied Physics, vol. 103, pp. 073710-1 to 073710-7.
• Tan, J, Cuevas, A, MacDonald, D et al 2008, 'On the electronic improvement of multi-crystalline silicon via gettering and hydrogenation', Progress in Photovoltaics: Research and Applications, vol. 16, no. 2, pp. 129 - 134.
• Trupke, T, Bardos, R, Abbott, M et al 2007, 'PROGRESS WITH LUMINESCENCE IMAGING FOR THE CHARACTERISATION OF SILICON WAFERS AND SOLAR CELLS', European Photovoltaic Solar Energy Conference 2007, ed. Conference Program Committee, WIP-Renewable Energies, Germany, pp. 22-31.
• Rosenits, P, Roth, T, Diez, S et al 2007, 'DETAILED STUDIES OF MANGANESE IN SILICON USING LIFETIME SPECTROSCOPY AND DEEP-LEVELTRANSIENT SPECTROSCOPY', European Photovoltaic Solar Energy Conference 2007, ed. Conference Program Committee, WIP-Renewable Energies, Germany, pp. 1480-1483.
• MacDonald, D, Rosenits, P & Deenapanray, P 2007, 'Recombination activity of manganese in p- and n-type crystalline silicon', Semiconductor Science and Technology, vol. 22, pp. 163-167.
• Roth, T, Rosenits, P, Diez, S et al 2007, 'Electronic properties and dopant pairing behavior of manganese in boron-doped silicon', Journal of Applied Physics, vol. 102, no. 103716, p. 8.
• Tan, J, Cuevas, A, MacDonald, D et al 2007, 'OPTIMISED GETTERING AND HYDROGENATION OF MULTI-CRYSTALLINE SILICON WAFERS FOR USE IN SOLAR CELLS', European Photovoltaic Solar Energy Conference 2007, ed. Conference Program Committee, WIP-Renewable Energies, Germany, pp. 1309-1313.
• Tan, J, MacDonald, D, Bennett, N et al 2007, 'Dissolution of metal precipitates in multicrystalline silicon during annealing and the protective effect of phosphorus emitters', Applied Physics Letters, vol. 91, pp. 043505 1-3.
• MacDonald, D, Tan, J, Bardos, R et al 2007, 'IMPURITIES IN SOLAR-GRADE SILICON AND THEIR CHARACTERISATION', European Photovoltaic Solar Energy Conference 2007, ed. Conference Program Committee, WIP-Renewable Energies, Germany, pp. 820-828.
• Burgers, A, Geerligs, L, MacDonald, D et al 2007, 'Quantitative analysis of grain boundary recombination in multi-crystalline silicon wafers', International Photovoltaic Science and Engineering Conference (PVSEC 2007), ed. Conference Program Committee, Elsevier, Netherlands, pp. 241-242.
• Mitchell, J, MacDonald, D & Cuevas, A 2007, 'Plasma-Enhanced Chemical Vapour Deposition of a-Si:H to Provide Surface Passivation of c-Si Surfaces at Low Temperature', European Photovoltaic Solar Energy Conference 2007, ed. Conference Program Committee, WIP-Renewable Energies, Germany, p. 4.
• Geerligs, L, MacDonald, D & Coletti, G 2007, 'Possible reduction of recombination lifetime due to compensated dopants', National Renewable Energy Laboratory Workshop on Crystalline Silicon Solar Cells & Modules 2007, Conference Organising Committee, USA.
• Barton, D, Blakers, A, Cuevas, A et al 2007, 'Solar@ANU', Solar Progress, vol. 28, no. 1.
• McLean, K, MacDonald, D & Morrow, C 2006, 'Activation energy for the hydrogenation of iron in p-type crystalline silicon wafers', World Conference on Photovoltaic Energy Conversion 2006, ed. Conference Program Committee, OmniPress, Waikoloa Hawaii, pp. 1122-1125.
• Geerligs, L, Coletti, G & MacDonald, D 2006, 'On accurate and quantatative measurements of iron-concentration in multicrystalline silicon by iron-boron pair association', European Photovoltaic Solar Energy Conference 2006, ed. Conference Program Committee, John Wiley & Sons Inc, Germany, pp. 692-695.
• Schmidt, J, Bothe, K, MacDonald, D et al 2006, 'Electronically stimulated degradation of silicon solar cells', Journal of Materials Research, vol. 21, no. 1, pp. 5-12.
• Petravic, M, Gao, Q, Llewellyn, D et al 2006, 'Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors', Chemical Physics Letters, vol. 425, pp. 262-266.
• MacDonald, D, Roth, T, Deenapanray, P et al 2006, 'Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon', Applied Physics Letters, vol. 89, no. 14, p. 142107.
• Schmidt, J, Bothe, K, MacDonald, D et al 2006, 'Electronically stimulated degradation of silicon solar cells', Journal of Materials Research, vol. 21, no. 1, pp. 5-12.
• Tan, J, Cuevas, A, MacDonald, D et al 2006, 'Investigation of industrial processing and its impacts on multicrystalline silicon substrate quality', European Photovoltaic Solar Energy Conference 2006, ed. Conference Program Committee, John Wiley & Sons Inc, Germany, pp. 881-884.
• Deenapanray, P, Athukorala, C, MacDonald, D et al 2006, 'Reactive ion etching of dielectrics and silicon for photovoltaics', Progress in Photovoltaics: Research and Applications, vol. 14, no. 7, pp. 603-614.
• MacDonald, D, Maeckel, H & Cuevas, A 2006, 'Recombination in n- and p- type silicon emitters contaminated with iron', World Conference on Photovoltaic Energy Conversion 2006, ed. Conference Program Committee, OmniPress, Waikoloa Hawaii, pp. 952-955.
• Weber, T, Zechner, C, MacDonald, D et al 2006, 'Numerical simulation of gettering and recombination in iron-contaminated boron emitters', European Photovoltaic Solar Energy Conference 2006, ed. Conference Program Committee, John Wiley & Sons Inc, Germany, pp. 1486-1498.
• Tan, J, Cuevas, A, Baetzner, D et al. 2006, 'Examination of screen printed aluminium back surface fields for silicon solar cells', Australia and New Zealand Solar Energy Society Conference (Solar 2006), ed. Conference Program Committee, Australian and New Zealand Solar Energy Society (ANZSES), Canberra Australia, p. 7.
• Mitchell, J, MacDonald, D & Cuevas, A 2006, 'Thermally activated surface passivation of a-Si:H/c-Si interfaces with annealing', Australia and New Zealand Solar Energy Society Conference (Solar 2006), ed. Conference Program Committee, Australian and New Zealand Solar Energy Society (ANZSES), Canberra Australia, p. 7.
• Gatzert, C, Blakers, A, Deenapanray, P et al 2006, 'Investigation of reactive ion etching of dielectrics and Si in CHF3/O2 or CHF3/Ar for photovoltaic applications', Journal of Vacuum Science and Technology A, vol. 24, no. 5, pp. 1857-1865.
• MacDonald, D, Maeckel, H & Cuevas, A 2006, 'Effect of gettered iron on recombination in diffused regions of crystalline silicon wafers', Applied Physics Letters, vol. 88, no. 092105, p. 3.
• Tan, J, Cuevas, A, MacDonald, D et al. 2006, 'Measurement and optimization of the recombination current of p+ aluminium doped regions', European Photovoltaic Solar Energy Conference 2006, ed. Conference Program Committee, John Wiley & Sons Inc, Germany, pp. 1377-1380.
• Rosenits, P & MacDonald, D 2006, 'Lifetime studies on manganese implanted silicon', European Photovoltaic Solar Energy Conference 2006, ed. Conference Program Committee, John Wiley & Sons Inc, Germany, pp. 953-956.
• MacDonald, D & Rosenits, P 2006, 'The impact of manganese contamination on the carrier lifetime in crystalline silicon', Australia and New Zealand Solar Energy Society Conference (Solar 2006), ed. Conference Program Committee, Australian and New Zealand Solar Energy Society (ANZSES), Canberra Australia, p. 7.
• Schmidt, J & MacDonald, D 2005, 'Recombination activity of iron-gallium and iron-indium pairs in silicon', Journal of Applied Physics, vol. 97, no. 11, pp. 113712-1 - 113712-9.
• MacDonald, D, Roth, T, Geerligs, L et al 2005, 'Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers', Solid State Phenomena, vol. 108-109, pp. 519-524.
• MacDonald, D, Roth, T, Deenapanray, P et al 2005, 'Formation rates of iron-acceptor pairs in crystalline silicon', Journal of Applied Physics, vol. 98, no. 8, pp. 1-5.
• Birkholz, J, Bothe, K, MacDonald, D et al 2005, 'Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements', Journal of Applied Physics, vol. 97, no. 10, pp. 1-6.
• Schmidt, J, Bothe, K, MacDonald, D et al 2005, 'Electronically Stimulated Degradation of Crystalline Silicon Solar Cells', Materials Research Society Meeting Spring 2005, ed. T Gregorkiewicz, Y Fujiwara, M Lipson, JM Zavada, Materials Research Society, USA, pp. 1-12.
• Schmidt, J, Bothe, K, MacDonald, D et al 2005, 'Mechanisms of light-induced degradation in mono- and multicrystalline silicon solar cells', European Photovoltaic Solar Energy Conference 2005, ed. W Palz, H Ossenbrink, P Helm, WIP-Renewable Energies, Munich, Germany, pp. 761-764.
• MacDonald, D & Cuevas, A 2005, 'Reduced Recombination Activity of Nickel Precipitates: Another Advantage of n-type Silicon', International Photovoltaic Science and Engineering Conference (PVSEC 2005), ed. Cui Rongqiang, Chen Tingjin, Li Guoxin, Sun Tietun, Shanghai Scientific & Technological Literature Publishing House, Shanghai, pp. 210-211.
• Harder, N & MacDonald, D 2005, 'Electronic up-conversion: a combination of the advantages of impurity photovoltaics and (optical) up-conversion', IEEE Photovoltaic Specialists Conference (PVSC 2005), ed. not listed, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 110-113.
• Cuevas, A & MacDonald, D 2005, 'Multicrystalline Silicon: a Review of Its Electronic Properties', International Photovoltaic Science and Engineering Conference (PVSEC 2005), ed. Cui Rongqiang, Chen Tingjin, Li Guoxin, Sun Tietun, Shanghai Scientific & Technological Literature Publishing House, Shanghai, pp. 521-524.
• MacDonald, D, Cuevas, A, Kinomura, A et al 2005, 'Transition-metal profiles in a multicrystalline silicon ingot', Journal of Applied Physics, vol. 97, no. 3, pp. 1-7.
• MacDonald, D 2005, 'Impact of nickel contamination on carrier recombination in n- and p-type crystalline silicon wafers', Applied Physics A: Materials Science and Processing, vol. 81, no. 8, pp. 1619-1625.
• MacDonald, D, Deenapanray, P, Cuevas, A et al 2005, 'The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon', Solid State Phenomena, vol. 108-109, pp. 497-502.
• Deenapanray, P, Horteis, M, MacDonald, D et al 2005, 'Minority Carrier Lifetime Properties of Reactive Ion Etched p-Type Float Zone Si', Electrochemical and Solid-State Letters, vol. 8, no. 3, pp. G78-G81.
• Kumaravelu, G, Alkaisi, M, MacDonald, D et al 2005, 'Minority carrier lifetime in plasma-textured silicon wafers for solar cells', Solar Energy Materials and Solar Cells, vol. 87, no. 1-4, pp. 99-106.
• Mitchell, J, MacDonald, D, Cuevas, A et al 2005, 'Electronic and structural properties of amorphous silicon on crystalline silicon wafers', European Photovoltaic Solar Energy Conference 2005, ed. W Palz, H Ossenbrink, P Helm, WIP-Renewable Energies, Munich, Germany, pp. 1004-1007.
• Deenapanray, P, Athukorala, C, MacDonald, D et al 2005, 'Influence of reactive ion etching on the minority carier lifetime in p-type Si', European Photovoltaic Solar Energy Conference 2005, ed. W Palz, H Ossenbrink, P Helm, WIP-Renewable Energies, Munich, Germany, pp. 643-646.
• Baetzner, D, Tan, J, Hanton, K et al. 2005, 'Dependence of phosphorous gettering of multicrystalline silicon on diffusion sheet resistance and ingot position', European Photovoltaic Solar Energy Conference 2005, ed. W Palz, H Ossenbrink, P Helm, WIP-Renewable Energies, Munich, Germany, pp. 655-658.
• MacDonald, D, Cuevas, A, McIntosh, K et al 2005, 'Impact of Cr, Fe, Ni, Ti and W surface contamination on diffused and oxidised a-type crystalline silicon wafers', European Photovoltaic Solar Energy Conference 2005, ed. W Palz, H Ossenbrink, P Helm, WIP-Renewable Energies, Munich, Germany, pp. 627-630.
• Birkholz, J, Bothe, K, MacDonald, D et al 2005, 'Recombination parameters of iron-boron pairs in boron doped crystalline silicon', European Photovoltaic Solar Energy Conference 2005, ed. W Palz, H Ossenbrink, P Helm, WIP-Renewable Energies, Munich, Germany, pp. 1340-1343.
• Schmidt, J, Bothe, K, MacDonald, D et al 2004, 'Mechanisms of Light-Induced Degradation in c-Si Solar Cells', International Symposium on Advanced Science and Technology of Silicon Materials 2004, ed. K Kakimoto, Japan Society for the Promotion of Science, Fukuoka, Japan, pp. 461-466.
• Geerligs, L & MacDonald, D 2004, 'Base doping and recombination activity of impurities in crystalline silicon solar cellts', Progress in Photovoltaics: Research and Applications, vol. 12, no. 4, pp. 309-315.
• MacDonald, D & Geerligs, L 2004, 'Recombination activity of iron and other transition metals in p- and n- type crystalline silicon', European Photovoltaic Solar Energy Conference 2004, ed. W Hoffmann, J-L Bal, H Ossenbrink, W Palz, P Helm, WIP Munich and ETA-Florence, Florence, pp. 492-495.
• Cuevas, A & MacDonald, D 2004, 'Measuring and interpreting the lifetime of silicon wafers', Solar Energy, vol. 76, no. 1, pp. 255-262.
• MacDonald, D, Cuevas, A, Kerr, M et al 2004, 'Texturing industrial multicrystalline silicon solar cells', Solar Energy, vol. 76, no. 1, pp. 277-283.
• Winderbaum, S, Cuevas, A, Chen, F et al 2004, 'Industrial PECVD silicon nitride: surface and bulk passivation of silicon wafers', European Photovoltaic Solar Energy Conference 2004, ed. W Hoffmann, J-L Bal, H Ossenbrink, W Palz, P Helm, WIP Munich and ETA-Florence, Florence, pp. 576-579.
• MacDonald, D, Cuevas, A, Kinomura, A et al 2004, 'Interstitial and precipitated iron content of photovoltaic-grade multicrystalline silicon', International Symposium on Advanced Science and Technology of Silicon Materials 2004, ed. K Kakimoto, Japan Society for the Promotion of Science, Fukuoka, Japan, pp. 390-396.
• Geerligs, L & MacDonald, D 2004, 'Dynamics of light-induced FeB pair dissociation in crystalline silicon', Applied Physics Letters, vol. 85, no. 22, pp. 5227-5229.
• Azzizi, A, Geerligs, L & MacDonald, D 2004, 'Hydrogen passivation of iron in crystalline silicon', European Photovoltaic Solar Energy Conference 2004, ed. W Hoffmann, J-L Bal, H Ossenbrink, W Palz, P Helm, WIP Munich and ETA-Florence, Florence, pp. 1021-1024.
• Mitchell, J, MacDonald, D, Cuevas, A et al 2004, 'Surface Passiviation of n- and p-type Crystalline Silicon Wafers by Amorphous Silicon Films', Australia and New Zealand Solar Energy Society Conference (Solar 2004), Australian and New Zealand Solar Energy Society (ANZSES), Perth, pp. 1-4.
• MacDonald, D, Deenapanray, P & Diez, S 2004, 'Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon', Journal of Applied Physics, vol. 96, no. 7, pp. 3687-3691.
• MacDonald, D, McLean, K, Mitchell, J et al 2004, 'An alternative scheme for implementing the impurity-photovoltaic effect in crystalline silicon', European Photovoltaic Solar Energy Conference 2004, ed. W Hoffmann, J-L Bal, H Ossenbrink, W Palz, P Helm, WIP Munich and ETA-Florence, Florence, pp. 88-91.
• MacDonald, D, Geerligs, L & Azzizi, A 2004, 'Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping', Journal of Applied Physics, vol. 95, no. 3, pp. 1021-1028.
• Kumaravelu, G, Alkaisi, M, Bittar, A et al 2004, 'Damage studies in dry etched textured silicon surfaces', Current Applied Physics, vol. 4, no. 2-4, pp. 108-110.
• MacDonald, D & Geerligs, L 2004, 'Recombination activity of interstitial iron and other transition metal point defects in p-type and n-type crystalline silicon', Applied Physics Letters, vol. 85, no. 18, pp. 4061-4063.
• MacDonald, D & Cuevas, A 2003, 'Validity of simplified Shockley-Read-Hall statistics for modelling carrier lifetimes in crystalline silicon', Physical Review B, vol. 67, pp. 075203-1 to 075203-7.
• MacDonald, D, Maeckel, H, Doshi, S et al. 2003, 'Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon', Applied Physics Letters, vol. 82, no. 18, pp. 2987-2989.
• Cuevas, A, Samundsett, C, Kerr, M et al. 2003, 'Back junction solar cells on n-type multicrystalline and Cz silicon wafers', World Conference on Photovoltaic Energy Conversion 2003, ed. K Kurokawa, L L Kazmerski, B McNelis, M Yamaguchi, C Wronski, W C Sinke, IEEE Explore, Japan, pp. 4)D10-03_1-4.
• MacDonald, D, Cheung, A & Cuevas, A 2003, 'Gettering and poisoning of silicon wafers by phosphorus diffused layers', World Conference on Photovoltaic Energy Conversion 2003, ed. K Kurokawa, L L Kazmerski, B McNelis, M Yamaguchi, C Wronski, W C Sinke, IEEE Explore, Japan, pp. 4PC4-04_1-4.
• MacDonald, D, Cuevas, A, Rein, S et al 2003, 'Temperature- and injection-dependent lifetime spectroscopy of copper-related defects in silicon', World Conference on Photovoltaic Energy Conversion 2003, ed. K Kurokawa, L L Kazmerski, B McNelis, M Yamaguchi, C Wronski, W C Sinke, IEEE Explore, Japan, pp. 1PC3-05_1-4.
• Glunz, S, Grohe, A, Hermle, M et al. 2003, 'Analysis of laser-fired local back surface fields using n⁺np⁺ cell structures', World Conference on Photovoltaic Energy Conversion 2003, ed. K Kurokawa, L L Kazmerski, B McNelis, M Yamaguchi, C Wronski, W C Sinke, IEEE Explore, Japan, pp. 4PC4-04_1-4.
• Cuevas, A, Riepe, S, Kerr, M et al 2003, 'n-type multicrystaline silicon: A stable, high lifetime material', World Conference on Photovoltaic Energy Conversion 2003, ed. K Kurokawa, L L Kazmerski, B McNelis, M Yamaguchi, C Wronski, W C Sinke, IEEE Explore, Japan, pp. 4PB4-44_1-4.
• MacDonald, D & Cuevas, A 2003, 'Metallic Impurities in Multicrystalline Silicon', Solar World Congress 2001, ed. W.Y. Saman, W.W.S. Charters, Australian and New Zealand Solar Energy Society (ANZSES), Adelaide, pp. 1687-1691.
• Cuevas, A & MacDonald, D 2003, 'Measuring and Interpreting the Lifetime of Silicaon Wafers', Solar World Congress 2001, ed. W.Y. Saman, W.W.S. Charters, Australian and New Zealand Solar Energy Society (ANZSES), Adelaide, pp. 1517-1522.
• MacDonald, D, Cuevas, A, Kerr, M et al 2003, 'Texturing Industrial Multicrystalline Silicon Solar Cells', Solar World Congress 2001, ed. W.Y. Saman, W.W.S. Charters, Australian and New Zealand Solar Energy Society (ANZSES), Adelaide, pp. 1559-1565.
• Cuevas, A, Sinton, R, Kerr, M et al. 2002, 'A contactless photoconductance technique to evaluate the quantum efficiency of solar cell emitters', Solar Energy Materials and Solar Cells, vol. 71, no. 3, pp. 295-312.
• MacDonald, D, Brendle, W, Cuevas, A et al 2002, 'Injection-Dependent Lifetime Studies of Copper Precipitates in Silicon', Workshop on Crystalline Silicon Solar Cell Materials and Processes 2002, Conference Organising Committee, USA, pp. 1-4.
• MacDonald, D, Cuevas, A, Kinomura, A et al 2002, 'Phosphorus gettering in multicrystalline silicon studied by neutron activation analysis', IEEE Photovoltaic Specialists Conference (PVSC 2002), ed. John Benner, Institute of Electrical and Electronics Engineers (IEEE Inc), New York, pp. 285-288.
• MacDonald, D & Cuevas, A 2001, 'Comment on mechanisms for the anomalous dependence of carrier lifetime on injection level and photoconductance on light intensity', Journal of Applied Physics, vol. 90, no. 5, pp. 2621-2622.
• Sears, K, Cuevas, A & MacDonald, D 2001, 'Influence of copper on the carrier lifetime of n-type and p-type silicon', Workshop on crystalline silicon solar cell materials and processes 2001, ed. B. L. Sopori, Conference Organising Committee, Golden USA, pp. 212-215.
• MacDonald, D, Sinton, R & Cuevas, A 2001, 'On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon', Journal of Applied Physics, vol. 89, no. 5, pp. 2772-2778.
• MacDonald, D & Cuevas, A 2001, 'Understanding carrier trapping in multicrystalline silicon', Solar Energy Materials and Solar Cells, vol. 65, pp. 509-516.
• MacDonald, D, Cuevas, A & Wong Leung, Y 2001, 'Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements', Journal of Applied Physics, vol. 89, no. 12, pp. 7932-7939.
• MacDonald, D & Cuevas, A 2001, 'Lifetime spectroscopy of FeB pairs in silicon', Workshop on crystalline silicon solar cell materials and processes 2001, ed. B. L. Sopori, Conference Organising Committee, Golden USA, pp. 24-31.
• MacDonald, D & Cuevas, A 2000, 'Reduced Fill Factors in Multicrystalline Silicon Solar Cells Due To Injection-level Dependant Bulk Recombination Lifetimes', Progress in Photovoltaics: Research and Applications, vol. 8, pp. 363 - 375.
• Cuevas, A, MacDonald, D, Kerr, M et al. 2000, 'Evidence of impurity gettering by industrial phosphorus diffusion', IEEE Photovoltaic Specialists Conference (PVSC 2000), ed. IEEE Electron Devices ociety, Institute of Electrical and Electronics Engineers (IEEE Inc), New York, USA, pp. 244-247.
• Cuevas, A, Kerr, M, MacDonald, D et al 2000, 'Emitter quantum efficiency from contactless photoconductance measurements', IEEE Photovoltaic Specialists Conference (PVSC 2000), ed. IEEE Electron Devices ociety, Institute of Electrical and Electronics Engineers (IEEE Inc), New York, USA, pp. 108-110.
• MacDonald, D, Cuevas, A, Kerr, M et al. 2000, 'Characterisation of a Commercial Multicrystalline Silicon Solar Cell Fabrication Process', Australia and New Zealand Solar Energy Society Conference (Solar 2000), ed. Brisbane, Australia, Australian and New Zealand Solar Energy Society (ANZSES), Brisbane, Australia.
• MacDonald, D & Cuevas, A 2000, 'The Use of Injection-Level Dependant Lifetime Measurements for Determining Solar Cell Parameters', Australia and New Zealand Solar Energy Society Conference (Solar 2000), ed. Brisbane, Australia, Australian and New Zealand Solar Energy Society (ANZSES), Brisbane, Australia.
• MacDonald, D & Cuevas, A 2000, 'The trade-off between phosphorus gettering and thermal degradation in multicrystalline silicon', European Photovoltaic Solar Energy Conference 2000, ed. H. Scheer, B McNelis, W Palz, H A Ossenbrink and P Helm., James and James, London, pp. 1707-1710.
• Stocks, M & MacDonald, D 2000, 'Non-ideal resistive effects in silicon solar cells', European Photovoltaic Solar Energy Conference 2000, ed. H. Scheer, B McNelis, W Palz, H A Ossenbrink and P Helm., James and James, London, pp. 1671-1674.
• MacDonald, D & Cuevas, A 1999, 'Trapping of minority carriers in mulicrystalline silicon', Applied Physics Letters, vol. 74 (12), pp. 1710-1712.
• MacDonald, D, Cuevas, A & Ferrazza, F 1999, 'Response to phosphorus gettering of different regions of cast multicrystalline silicon ingots', Solid-State Electronics, vol. 43, pp. 575-581.
• MacDonald, D, Kerr, M & Cuevas, A 1999, 'Boron-related minority carrier trapping centers in p-type silicon', Applied Physics Letters, vol. 75(11), pp. 1571-1573.
• Cuevas, A, Stocks, M, MacDonald, D et al. 1999, 'Recombination and trapping in multicrystalline silicon', IEEE Transactions on Electron Devices, vol. 46, pp. 2026-2034.