Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon
Citation
MacDonald, D, Maeckel, H, Doshi, S et al. 2003, 'Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon', Applied Physics Letters, vol. 82, no. 18, pp. 2987-2989.Year
2003Fields of Research
- Electrical And Electronic Engineering Not Elsewhere Classified
- Electronic And Magnetic Properties Of Condensed Matter; Superconductivity
