Reduced threshold current in NbO2 selector by engineering device structure

Citation

Liu, X, Nandi, S, Venkatachalam, D et al. 2014, 'Reduced threshold current in NbO2 selector by engineering device structure', IEEE Electron Device Letters, vol. 35, no. 10, pp. 1055-1057.

Year

2014

ANU Authors

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Metals And Alloy Materials

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