Finite Element Modeling of Resistive Switching in Nb2O5-based Memory Device

Citation

Liu, X, Nandi, S, Venkatachalam, D et al. 2014, 'Finite Element Modeling of Resistive Switching in Nb2O5-based Memory Device', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014), ed. Martyniuk M.Faraone, IEEE, New York, pp. 280-283.

Year

2014

ANU Authors

Field of Research

  • Surfaces And Structural Properties Of Condensed Matter

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