Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process
Citation
Kim, J, Moon, S, Yoon, H et al. 2012, 'Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process', Crystal Growth & Design, vol. 12, no. 1, pp. 135-141.Year
2012Fields of Research
- Elemental Semiconductors
- Nanofabrication, Growth And Self Assembly
