Electrical properties of Si... - Researchers

Electrical properties of Si-XII and Si-III formed by nanoindentation

Citation

Wang, Y, Ruffell, S, Sears, K et al. 2010, 'Electrical properties of Si-XII and Si-III formed by nanoindentation', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), ed. H. Hoe Tan, Institute of Electrical and Electronics Engineers (IEEE Inc), Australia, pp. 105-106.

Year

2010

ANU Authors

Professor Jodie Bradby
Professor Jim Williams

Field of Research

Surfaces And Structural Properties Of Condensed Matter

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