Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers
Citation
Deenapanray, P, Tan, H, Jagadish, C et al. 2000, 'Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers', Journal of Applied Physics, vol. 88, pp. 5255-5261.Year
2000ANU Authors
Field of Research
- Plasma Physics; Fusion Plasmas; Electrical Discharges