Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells

Citation

Du, S, Fu, L, Tan, H et al. 2010, 'Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells', Semiconductor Science and Technology, vol. 25, no. 5, p. 7.

Year

2010

ANU Authors

Field of Research

  • Surfaces And Structural Properties Of Condensed Matter

Updated:  05 July 2024 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers