The effect of boron diffusions on the defect density and recombination at the (111) silicon-silicon oxide interface
Citation
Jin, H, Jellett, W, Chun, Z et al 2008, 'The effect of boron diffusions on the defect density and recombination at the (111) silicon-silicon oxide interface', Applied Physics Letters, vol. 92, no. 12, pp. 122109-1 to 122109-3.Year
2008Field of Research
- Structural Chemistry And Spectroscopy
