Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures
Citation
Gareso, P, Buda, M, Fu, L et al. 2007, 'Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures', Semiconductor Science and Technology, vol. 22, pp. 988-992.Year
2007Field of Research
- Nanotechnology Not Elsewhere Classified
