Properties of In0.5Ga0.5As/GaAs/ Al0.2Ga0.8 As quantum-dots-in-a-well infrared photodetectors
Citation
Jolley, G, Fu, L, Tan, H et al. 2009, 'Properties of In0.5Ga0.5As/GaAs/ Al0.2Ga0.8 As quantum-dots-in-a-well infrared photodetectors', Journal of Physics D: Applied Physics, vol. 42, no. 9, p. 8.Year
2009Field of Research
- Condensed Matter Physics Not Elsewhere Classified