In Situ Measurements of the Channeling Dependence of Ion-beam-induced Recrystallization in Silicon
Citation
De Medeiros Azevedo, G, Williams, J, Young, I et al. 2002, 'In Situ Measurements of the Channeling Dependence of Ion-beam-induced Recrystallization in Silicon', Nuclear Instruments and Methods in Physics Research: Section B, vol. 190, pp. 772-776.Year
2002ANU Authors
Field of Research
- Plasma Physics; Fusion Plasmas; Electrical Discharges