Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers
Citation
Deenapanray, P, Gong, B, Lamb, R et al. 2002, 'Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers', Applied Physics Letters, vol. 80, no. 23, pp. 4351-4353.Year
2002Fields of Research
- Classical And Physical Optics
- Electrical And Electronic Engineering Not Elsewhere Classified
