Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition
Citation
Deenapanray, P, Lay, M, Aberg, D et al. 2001, 'Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition', Physica B, vol. 308-310, pp. 776-779.Year
2001ANU Authors
Field of Research
- Electrical And Electronic Engineering Not Elsewhere Classified