Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition

Citation

Deenapanray, P, Tan, H, Jagadish, C et al. 2000, 'Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition', Applied Physics Letters, vol. 77, pp. 696-698.

Year

2000

ANU Authors

Field of Research

  • Plasma Physics; Fusion Plasmas; Electrical Discharges

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