Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells

Citation

Deenapanray, P, Tan, H & Jagadish, C 2000, 'Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells', Materials Research Society Symposium Proceedings, vol. 607, pp. 491-502.

Year

2000

ANU Authors

Field of Research

  • Plasma Physics; Fusion Plasmas; Electrical Discharges

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