A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers
Citation
Deenapanray, P, Svensson, B, Tan, H et al. 2003, 'A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers', Japanese Journal of Applied Physics, vol. 42, no. 3, pp. 1158-1163.Year
2003ANU Authors
Field of Research
- Metals And Alloy Materials