Growth of Highly Strained I... - Researchers

Growth of Highly Strained InGaAs Quantum Wells on GaAs Substrates - Effect of Growth Rate

Citation

Tan, H, McGowan, P & Jagadish, C 2005, 'Growth of Highly Strained InGaAs Quantum Wells on GaAs Substrates - Effect of Growth Rate', Journal of Crystal Growth, vol. 274, pp. 85-89.

Year

2005

ANU Authors

Professor H. Hoe Tan
Professor Chennupati Jagadish

Field of Research

Soft Condensed Matter

Updated: 01 July 2024 / Responsible Officer: Director (Research Services Division) / Page Contact: Researchers