Properties of Radiative Recombination in GaAsN Epilayers
Citation
Sun, B, Gal, M, Gao, Q et al. 2003, 'Properties of Radiative Recombination in GaAsN Epilayers', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), ed. Michael Gal, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 483-486.Year
2003ANU Authors
Field of Research
- Electrical And Electronic Engineering Not Elsewhere Classified