Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition
Citation
Fu, L, McKerracher, I, Tan, H et al. 2007, 'Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition', Applied Physics Letters, vol. 91, pp. 073515 1-3.Year
2007Field of Research
- Nanotechnology Not Elsewhere Classified
