High temperature rapid ther... - Researchers

High temperature rapid thermal annealing of phosphorous ion implanted InAs/InP quantum dots

Citation

Barik, S, Tan, H & Jagadish, C 2007, 'High temperature rapid thermal annealing of phosphorous ion implanted InAs/InP quantum dots', Applied Physics Letters, vol. 90, pp. 093106 1-3.

Year

2007

ANU Authors

Professor H. Hoe Tan
Professor Chennupati Jagadish

Field of Research

Nanotechnology Not Elsewhere Classified

Updated: 01 July 2024 / Responsible Officer: Director (Research Services Division) / Page Contact: Researchers