Spin polarization through intersystem crossing in the silicon vacancy of silicon carbide
Citation
Dong, W, Doherty, M & Economou, S 2019, 'Spin polarization through intersystem crossing in the silicon vacancy of silicon carbide', Physical Review B, vol. 99, no. 18, pp. 1-14.Year
2019ANU Authors
Fields of Research
- Quantum Information, Computation And Communication
- Nanometrology