Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells

Citation

Du, S, Fu, L, Tan, H et al. 2008, 'Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells', International Conference on Nanoscience and Nanotechnology (ICONN 2008), ed. Conference Program Committee, Institute of Electrical and Electronics Engineers (IEEE Inc), USA, pp. 32-35.

Year

2008

Field of Research

  • Condensed Matter Physics Not Elsewhere Classified

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