Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material
Citation
Tran, P, Pastor, D, Gandhi, H et al. 2016, 'Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material', Journal of Applied Physics, vol. 119, no. 18, p. 183102.Year
2016ANU Authors
Field of Research
- Surfaces And Structural Properties Of Condensed Matter
